日本三菱电机公司研制出下一代通信用超高速光电转换元件光二极管。该光二极管能将光电转换率提高到90％以上,创世界最高光电转换率。研制人员首先在以铟、镓、砷为材料的基板上采用“有机化学气相生成法”生成出光吸收层,光吸收层接受到光之后就会迅速转换成电流。光吸收层越薄,应答速度越快。 Japan’s Mitsubishi Electric Corporation developed the next generation of ultra-high-speed optical communications components with photodiodes. The photodiode can be more than 90% photoelectric conversion rate, creating the world’s highest photoelectric conversion rate. Developers first use indium, gallium, arsenic as the material substrate using “organic chemical vapor generation method” to generate a light-absorbing layer, the light-absorbing layer will be quickly converted into light after receiving the current. The thinner the light absorbing layer, the faster the response.