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采用直流电弧喷射法制备了电子级自支撑金刚石材料。采用光学显微镜(OM)、扫描电子显微镜(SEM)和原子力显微镜(AFM)观察金刚石膜表面形貌,用Raman光谱仪和X射线衍射仪进行晶体分析及表征,结果表明,金刚石薄膜为(110)择优取向,厚度均匀,电学性能稳定。研究了抛光转速和压力对金刚石膜抛光效率的影响,抛光处理后金刚石表面粗糙度(R ms)为0.569 nm。采用氢等离子体处理方法对该样品进行处理形成p型表面沟道,并采用自对准工艺制作出具有射频特性的金刚石场效应晶体管,其饱和电流密度为330.9 mA/mm,电流截止频率f T为9.3 GHz,最大振荡频率f max为18.5 GHz。
Electronic grade self-supporting diamond was prepared by DC arc spraying. The surface morphology of diamond films was observed by optical microscope (OM), scanning electron microscope (SEM) and atomic force microscope (AFM). The crystal structure was characterized by Raman spectroscopy and X-ray diffractometer. The results showed that the diamond films were (110) Orientation, uniform thickness, electrical properties and stability. The effects of polishing speed and pressure on the polishing efficiency of diamond films were investigated. The diamond surface roughness (R ms) after polishing was 0.569 nm. The sample was processed by hydrogen plasma to form a p-type surface channel, and a self-aligned diamond-field-effect transistor with RF characteristic was fabricated. Its saturation current density was 330.9 mA / mm, current cut-off frequency f T Is 9.3 GHz and the maximum oscillation frequency f max is 18.5 GHz.