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本文提出在多数载流子对边区作非饱和填充的条件下求深中心分布的理论与实践.过去在对边区作饱和填充的条件下求分布的方法须要知道测量温度下深能级的实际位置,而通过热发射率测定的却是表观激活能,由后者精确求出前者有时是相当困难的.传统方法还须知道费米能级作为距离的函数,在有多个浓度较高深能级情况下,由C-V法难以求得这函数.本法无须知道深能级与费米能级位置,因而避免了上述困难.对硅中金受主应用了本方法.
In this paper, the theory and practice of depth center distribution under the condition of majority carrier charge in unsaturated zone are proposed in this paper. In the past, the method of determining the distribution under the condition of saturated fill in the boundary region needs to know the actual position of deep energy level at the measurement temperature , While the apparent activation energy is measured by the thermal emissivity, and it is sometimes quite difficult for the latter to find the former accurately.Traditionally, it is also necessary to know the Fermi level as a function of distance, It is difficult to obtain this function by the CV method, and this method avoids the above difficulties without having to know the deep level and the position of the Fermi level.This method is applied to gold acceptors in silicon.