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利用霍尔效应、电流 电压 (I V)、光致发光谱 (PL)和光电流谱 (PC)研究了不同掺铁浓度的半绝缘InP的性质 .半绝缘InP的I V特性明显地依赖于掺铁的浓度 .掺铁的浓度也对半绝缘InP的光学性质和材料中缺陷的形成有影响 .用PL和PC分别研究了掺铁半绝缘InP的禁带收缩现象和材料中的缺陷 .
The properties of semi-insulating InP with different doping concentrations were investigated by Hall effect, current voltage (IV), photoluminescence (PL) and photocurrent spectrum (PC) .The IV characteristics of semi-insulating InP obviously depend on the iron- Concentration.The concentration of iron doping also has an influence on the optical properties of semi-insulating InP and the formation of defects in the material.Forbidden band shrinkage and defects in Fe-doped semi-insulating InP were investigated by PL and PC, respectively.