论文部分内容阅读
,Characteristics and parameter extraction for NiGe/n-type Ge Schottky diode with variable annealing
【机 构】
:
School of Microelectronics,Xidian University,Key Laboratory for Wide Band-Gap Semiconductor Material
【出 处】
:
中国物理B(英文版)
【发表日期】
:
2010年5期
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