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给出一种纳米多晶硅薄膜压力传感器,采用LPCVD法在衬底温度620℃时制备纳米多晶硅薄膜,基于MEMS技术在方形硅膜不同位置制作由4个薄膜厚度为63.0nm的掺硼纳米多晶硅薄膜电阻构成惠斯通电桥结构,实现对外加压力的检测.实验结果表明,当硅膜厚度75μm时,纳米多晶硅薄膜压力传感器在恒压源5.0V供电时,满量程(160kPa)输出为24.235mV,灵敏度为0.151mV/kPa,精度为0.59%F.S,零点温度系数和灵敏度温度系数分别为-0.124%/℃和-0.108%/℃.
A nano-polysilicon thin film pressure sensor is provided. The LPCVD method is used to fabricate a nano-polysilicon thin film at a substrate temperature of 620 ° C. Four nano-polysilicon thin film resistors with a film thickness of 63.0 nm are fabricated on different positions of the square silicon film based on MEMS technology. The results show that when the thickness of the silicon film is 75μm, the output of the full-scale (160kPa) is 24.235mV when the nano-polysilicon thin film pressure sensor is powered by a constant voltage source, and the sensitivity 0.151mV / kPa, accuracy of 0.59% FS, temperature coefficient of zero temperature coefficient of sensitivity and sensitivity were -0.124% / ℃ and -0.108% / ℃.