论文部分内容阅读
本文研究了硅中离子注入层的卤钨灯辐照快速退火,对注B 和注P 样品分别测量了经1100℃、15秒和1050℃、12秒退火后注入层的载流子浓度分布,并与950℃、30分钟常规热退火样品作了比较;结果表明,卤钨灯辐照快速退火具有电激活率高、注入杂质再分布小及易于推广使用等优点.对于100keV、1×10~(15)cm~(-2)P 注入样品,经1050、10秒卤钨灯辐照退火后,表面薄层电阻为74.8Ω/□;对通过920(?)SiO_2膜,25keV、1×10~(15)cm~(-2)B 注入样品,经1100℃、15秒卤钨灯辐照快速退火后表面薄层电阻为238.0Ω/□;而经过950℃、30分钟常规热退火后,以上两种样品的表面薄层电阻分别为72.0Ω/□和245.8Ω/□.采用这种退火方法制作出了结深为0.10μm 的近突变P~+N 结,并测量了结深与退火时间的关系.
In this paper, the rapid annealing of tungsten halogen lamps in Si ion implantation layer was studied. The carrier concentration distribution of the implanted layer after annealing at 1100 ℃, 15 seconds and 1050 ℃ for 12 seconds were measured respectively for the samples B and P, The results show that the rapid annealing of tungsten halogen lamp has the advantages of high electrical activation rate, small redistribution of implanted impurities and easy to promote the use of the same. For 100keV, 1 × 10 ~ (15) cm ~ (-2) P, the surface sheet resistance was 74.8Ω / □ after irradiated by 1050,10 second tungsten halogen lamp, ~ (15) cm ~ (-2) B was injected into the sample and the surface sheet resistance was 238.0Ω / □ after rapid annealing at 1100 ℃ for 15 seconds. After conventional thermal annealing at 950 ℃ for 30 minutes, The surface sheet resistances of the above two samples were 72.0Ω / □ and 245.8Ω / □, respectively.The near-mutation P ~ + N junction with a junction depth of 0.10μm was fabricated by this annealing method, and the junction depth and annealing time relationship.