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选择性退火技术(在有图形的抗反射涂层的下面激光退火)已成功应用于生长很大(20微米×3000微米)的硅单晶。用常规光刻工艺控制晶粒的边界位置,所获得的晶粒是近乎完美的矩形。
Selective annealing techniques (laser annealing under patterned anti-reflective coatings) have been successfully applied to silicon single crystals that grow very much (20 microns by 3000 microns). Using conventional photolithography to control the position of the grain boundaries, the grains obtained are nearly perfect rectangles.