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The optical properties of Silicon-doped InGaN and GaN grown on sapphire by MOCVD have been investigated by photoluminescence (PL) method. At room temperature, the band-gap peak of InGaN is 437.0 nm and its full width of half-maximum (FWHM) is about 14.3 nm. The band-gap peak and FWHM for GaN are 364.4 nm and 9.5 nm, respectively. By changing the temperature from 20 K to 293 K, it is found that the PL intensity of samples decreases but the FWHM broadens with the increasing of the temperature. GaN sample shows red-shift, InGaN sample shows red-blue-red-shift. The temperature dependence of peak energy shift is studied and explained.
The optical properties of Silicon-doped InGaN and GaN grown on sapphire by MOCVD have been investigated by photoluminescence (PL) method. At room temperature, the band-gap peak of InGaN is 437.0 nm and its full width of half-maximum (FWHM) is about 14.3 nm. The band-gap peak and FWHM for GaN are 364.4 nm and 9.5 nm, respectively. By changing the temperature from 20 K to 293 K, it is found that the PL intensity of samples decreases but the FWHM broadens with the increase of the temperature. GaN sample shows red-shift, InGaN sample shows red-blue-red-shift. The temperature dependence of peak energy shift is studied and explained.