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研究了不同气氛下(空气、氧气和氮气)248nm准分子激光辐照对ZnO薄膜光致发光谱和电学性质的影响;采用高斯线形对不同气氛下激光辐照ZnO薄膜的光致发光谱进行了拟合,并对位于3.31、3.28、3.247、3.1eV附近的发光峰进行了归属指认和机理分析。激光辐照ZnO薄膜导致紫外光致发光峰强度明显下降并伴有少量红移,并且使得位于3.274eV的一级声子伴线(D0X-1LO)发射峰和位于3.203eV的二级声子伴线(D0X-2LO)发射峰合并形成一个峰。富氧条件下激光辐照ZnO薄膜会造成受主浓度增加,施主浓度减少;而缺氧条件下激光辐照ZnO薄膜会造成受主浓度减少,施主浓度增加。激光辐照后ZnO薄膜的载流子浓度上升了2个数量级,载流子迁移率上升了1个数量级,电阻率下降了3个数量级。
The effects of 248nm excimer laser irradiation on the photoluminescence (PL) and electrical properties of ZnO thin films under different atmospheres (air, oxygen and nitrogen) were studied. The photoluminescence spectra of ZnO thin films irradiated by different atmospheres The luminescence peaks near 3.31, 3.28, 3.247 and 3.1 eV were assigned and assigned to the mechanism analysis. Laser irradiation of ZnO thin films resulted in a significant reduction of UV emission peak intensity accompanied by a small amount of redshift, and the emission peak of the first-order phonon (D0X-1LO) at 3.274eV and the second-order phonon at 3.203eV The line (D0X-2LO) emission peaks combine to form a peak. Under the condition of oxygen enrichment, the laser irradiation of ZnO thin film will result in the increase of acceptor concentration and donor concentration, while the laser irradiation of ZnO thin film will reduce the acceptor concentration and donor concentration under hypoxic conditions. The carrier concentration of ZnO thin films increased by two orders of magnitude after laser irradiation, the carrier mobility increased by one order of magnitude, and the resistivity decreased by three orders of magnitude.