据法国全国电信研究中心报道,该研究中心研制成功一种简单而快速的硅片热处理系统,其加热元件是两个卤素灯泡。据称这种设备能圆满地退火4英寸的离子注入硅片,其使用情况和产品结果均比当前报道的6.5千瓦氙弧灯聚光炉优越。产品的电学和结构测试表明,离子注入的全部杂质都能激活,没有任何明显的扩散现象,离子注入时的晶格损伤也获得很好的恢复。更为优越的是:两个最关 According to the French National Telecommunications Research Center reported that the research center successfully developed a simple and fast silicon heat treatment system, the heating element is two halogen bulbs. The device is said to anneal 4-inch ion-implanted wafers satisfactorily, both for use and for product results superior to the currently reported 6.5-kW xenon arc lamp concentrator. The electrical and structural tests of the product show that all impurities implanted by ion implantation can be activated without any obvious diffusion phenomenon and the lattice damage during ion implantation is well recovered. More superior is: the two most relevant