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最近几年,微小型计算机出现以来,对于电可写程序的只读存储器(PKOM)的需求有了大量的增加。本文介绍一个具有新特点的2048位 N-沟道全译码电可写清除的非易失性的 ROM(EAROM)。这种器件的存储晶体管是一个多层栅 MOS 场效应晶体管和两个晶体管组成的存储单元。存储单元与外围电路是采用 N-沟道硅栅工艺制造的。
In recent years, there has been a substantial increase in the demand for electrically writable program-read-only memories (PKOMs) since the advent of microcomputers. This article presents a 2048-bit N-Channel Fully Decodeable Nonvolatile ROM (EAROM) with new features. The memory transistor of this device is a multi-layer gate MOS field effect transistor and a memory cell composed of two transistors. Memory cells and peripheral circuits are manufactured using N-channel silicon gate technology.