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The electrical characteristics of Cu and Ni/Al AlGaN/GaN Schottky barrier diodes on Si substrates are compared.The onset voltage of Cu Schottky diodes is about 0.4V less than the Ni/Al contact.For the Cu/Ni Schottky contact,the leakage current is 4.7×10~(-7) A/mm at-10 V.After annealing,the leakage current is decreased to3.7×10~(-7) A/mm for 400℃ or 4.6×10~(-8) A/mm for 500℃,respectively.The electrical property is affected by the thickness ratio of Cu to Ni.The Cu/Ni for 80/20 nm shows a low onset voltage,while the Cu/Ni for 20/80 nm shows a low leakage current.Both breakdown voltages are above 720 V.
The electrical characteristics of Cu and Ni / Al AlGaN / GaN Schottky barrier diodes on Si substrates are compared. The onset voltage of Cu Schottky diodes is about 0.4V less than the Ni / Al contact. For the Cu / Ni Schottky contact, the leakage current is 4.7 × 10 -7 A / mm at-10 V. After annealing, the leakage current is decreased to 3.7 × 10 -7 A / mm for 400 ° C. or 4.6 × 10 -8 ) A / mm for 500 ° C, respectively. The electrical property is affected by the thickness ratio of Cu to Ni. Cu / Ni for 80/20 nm shows a low onset voltage, while the Cu / Ni for 20/80 nm shows a low leakage current.Both breakdown voltages are above 720 V.