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对InN薄膜在氨气氛下的高温退火行为进行了研究.利用XRD,SEM和XPS对样品进行了分析.结果表明,InN薄膜的结晶质量和表面形貌并不随退火温度单调变化.由于高温退火时N原子的挥发,剩下的In原子在样品表面聚集形成In颗粒.当退火温度高于425℃时,In原子的脱吸附作用增加,从而导致样品表面的In颗粒在退火温度高于425℃时逐渐减少.XRD和SEM结果表明In颗粒密度最高的样品具有最差的结晶质量.这种现象可能是由于In颗粒隔离了其下面的InN与退火气氛的接触,同时,金属In和InN结构上的差异也可能在InN中导致了高密度的结构缺陷,从而降低了InN薄膜的结晶质量.
The annealing behavior of InN thin films at high temperature in ammonia was studied.The samples were analyzed by XRD, SEM and XPS.The results show that the crystalline quality and surface morphology of InN films do not change monotonically with the annealing temperature.Because of high temperature annealing N atoms are volatilized and the remaining In atoms are accumulated on the sample surface to form In particles.When the annealing temperature is higher than 425 ℃, the desorption of In atoms increases, resulting in In particles on the sample surface when the annealing temperature is higher than 425 ℃ The XRD and SEM results show that the In In InN InN structure has the worst crystal quality.This phenomenon may be due to the In particles separating the InN from the annealing atmosphere and the In and InN structures Differences may also lead to high-density structural defects in InN, thereby reducing the crystalline quality of InN films.