本文报道的是采用低能量的氮或氨注入硅中形成氮化硅的方法。讨论了采用各种分析手段包括椭偏光法,化学腐蚀法、透射电子显微镜(TEM)、X射线光电子显微镜(XPS)、红外透射分光仪(IR)、卢瑟福背散射分光仪(RBS)对氮注入膜所进行的广泛的材料研究。研究出一种新的测量膜厚、密度、折射率和介电常数的方法。这种方法并用了椭园测量、电容测量以及由卢瑟福背散射所得的氮的面密度。一个重大的发现是注入氮化物膜的密度比CVD氮化物的密度低。对氮化物的其它材料特性也进行了简要的介绍。 This paper reports the use of low-energy nitrogen or ammonia into silicon to form silicon nitride. In this paper, the methods of analysis including ellipsometry, chemical etching, transmission electron microscopy (TEM), X-ray photoelectron microscopy (XPS), infrared transmission spectroscopy (IR) and Rutherford backscattering spectrometer Nitrogen Implantation Films Extensive material research. A new method of measuring film thickness, density, refractive index and dielectric constant has been developed. This method uses both ellipse measurements, capacitance measurements, and areal density of backscattered nitrogen from Rutherford. A significant finding is that the density of the nitride film is lower than the density of the CVD nitride. Other material properties of nitrides are also briefly described.