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采用中频磁控溅射Ti80Si20复合靶在单晶硅表面制备了共掺杂的类金刚石薄膜.研究了沉积温度对薄膜生长速率、化学成分、结构、表面性质和力学性能的影响.结果表明:随沉积温度升高,薄膜生长速率降低,薄膜Ti和Si原子浓度增加,C原子浓度降低;在高温下沉积的薄膜具有低sp3C含量、低表面接触角、低内应力和高的硬度与弹性模量.基于亚表层注入生长模型分析了沉积温度对薄膜生长和键合结构的影响,从薄膜生长机制和微观结构解释了表面性质和力学性能的变化.
The co-doped diamond-like carbon (DLC) films were prepared on the surface of single crystal silicon by medium frequency magnetron sputtering Ti80Si20 composite target. The effects of deposition temperature on the growth rate, chemical composition, structure, surface properties and mechanical properties of the films were investigated. The deposition temperature increases, the film growth rate decreases, the concentration of Ti and Si atoms increases and the concentration of C atom decreases. The films deposited at high temperature have low sp3C content, low surface contact angle, low internal stress and high hardness and elastic modulus The influence of deposition temperature on the growth and bonding structure of the films was analyzed based on the subsurface implantation growth model, and the changes of surface properties and mechanical properties were explained from the growth mechanism and microstructure of the films.