以偏离〈100〉面25.24°的硅〈113〉晶面为基底,采用氧化、光刻等平面工艺,在其上制成光栅常数为36μm的二氧化硅光栅图形作掩模,用常规的硅各向异性腐蚀,在硅上形成连续倾斜的V形槽结构,制成槽距为36μm波长6328(?)时衍射效率达69%的闪耀光栅,进一步缩小槽距,可望获得实用的闪耀光栅. Using a silicon <113> crystal plane with a deviation of 25.24 ° from the <100> plane as a substrate, a silicon grating pattern with a grating constant of 36 μm was prepared as a mask by a planar process such as oxidation and photolithography, Anisotropic etching, the continuous tilting V-groove structure is formed on the silicon to make a blazed grating with a diffraction efficiency of 69% when the groove pitch is 6328 (?) With a groove pitch of 36 μm, and the groove pitch is further narrowed so that a practical blazed grating .