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选取不含 H2 的 Si Cl4 / O2 混合气体作为反应源气体 ,并利用普通的 PECVD技术来实现低温沉积 Si基微米厚度的 Si O2 薄膜 ,测试并分析薄膜的红外吸收谱以及工艺参数对沉积过程的影响。
The SiCl4 / O2 mixed gas without H2 was selected as the reaction source gas, and Si O2 thin film was deposited at low temperature by ordinary PECVD technique. The infrared absorption spectrum of thin film and the influence of process parameters on the deposition process influences.