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采用等离子体增强化学气相沉积(PECVD)技术,在玻璃衬底上低温沉积了优质本征和掺磷纳米硅薄膜,并利用Raman散射谱和电导率谱对比研究了磷掺杂对纳米硅薄膜的电子输运性质的影响。研究结果表明影响本征纳米硅电导率的主导因素是载流子的迁移率,而自由载流子浓度影响有限;影响掺磷纳米硅薄膜电导率的因素既包括磷掺杂产生的自由载流子,又包括迁移率,其输运过程可用量子点隧穿(HQD)模型合理解释。少量掺磷会促进晶化,但过量掺磷会引起晶格畸变,不利于晶化率和电导率的提高。
Plasma-enhanced chemical vapor deposition (PECVD) was used to deposit high-quality intrinsic and phosphorus-doped nano-silicon films on glass substrates at low temperature. The effects of phosphorus doping on the properties of nano-silicon thin films were compared using Raman scattering spectra and conductivity spectra. Effects of electron transport properties. The results show that the dominant factor affecting the intrinsic conductivity of silicon nanocrystals is the carrier mobility, but the free carrier concentration has a limited impact; the factors that affect the conductivity of the phosphorus-doped nanosilver films include both free-flow of phosphorus-doped carriers Son, including mobility, the transport process can be reasonably explained by Quantum Dot Tunneling (HQD) model. A small amount of phosphorus will promote crystallization, but excess phosphorus will cause lattice distortion, is not conducive to the crystallization rate and conductivity increase.