为制备组分均匀的Hg_(0.8)Cd_(0.2)Te单晶体材料,发展了圆柱形熔体侧面冷却淬火技术,以实现HgCdTe熔体的快速定向凝固。淬火所得的多晶锭经通常的固态再结晶后,单晶成品率很高。我们最关心的是晶体的组分均匀性,特别是横向组分均匀性。将晶锭横切成厚为0.8～1.0mm的圆片,研磨去刀痕和切割损伤,用失重法测定密度,除锭尾10mm左右 In order to prepare homogeneous Hg_ (0.8) Cd_ (0.2) Te single crystal materials, a cylindrical melt side quenching technique was developed to achieve rapid directional solidification of HgCdTe melt. After quenching the polycrystalline ingot after the usual solid state recrystallization, single crystal yield is very high. We are most concerned about the uniformity of the components of the crystal, especially the uniformity of the lateral components. The ingot into a cross-section into a 0.8 ~ 1.0mm thick wafer, grinding to the cutting marks and cutting damage measured by weight loss method, except for about 10mm