DETERMINATION OF TOTAL EL2 AND NET ACCEPTOR CONCENTRATION IN UNDOPED SI GaAs BY MULTI-WAVELENGTH INF

来源 :Journal of Electronics(China) | 被引量 : 0次 | 上传用户：zhou20p

【摘要】

：

Total EL2 concentration distribution and net acceptor concentration distribution in uncloped semi-insulating(SI) LEC GaAs have been measured by multi-wavelength

【作者】

：

杨瑞霞李光平

【机构】

：

HebeiInstituteofTechnology,Tianjin300130,TianjinElectronicMaterialsResearchInstitute,Tianjin300192

【出处】

：

Journal of Electronics(China)

【发表日期】

：

1995年1期

【关键词】

：

EL2 ACCEPTOR GAAS INFRARED ABSORPTION Distribution EL2 Acceptor GaAs Infrared

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Total EL2 concentration distribution and net acceptor concentration distribution in uncloped semi-insulating(SI) LEC GaAs have been measured by multi-wavelength infrared absorption method. The experimental results indicate that total EL2 concentration rad

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DETERMINATION OF TOTAL EL2 AND NET ACCEPTOR CONCENTRATION IN UNDOPED SI GaAs BY MULTI-WAVELENGTH INF

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