论文部分内容阅读
为获得低损伤、稳定性好的感应耦合等离子体(ICP)刻蚀InGaAs探测器台面成型工艺,采用Raman光谱技术和X射线衍射(XRD)技术,初步研究了Cl2/N2气氛刻蚀InGaAs的主要损伤机制,确定以晶格缺陷损伤为主;并采用微波反射光电导衰退(μ-PCD)法对不同处理工艺下表面的缺陷损伤进行了表征和分析,结果表明刻蚀表面湿法腐蚀和硫化的方法可在一定程度上减小表面的缺陷损伤和断键,但是存在一些深层次的缺陷。
In order to obtain low damage and good stability of InGaAs detector by inductively coupled plasma (ICP) etching, Raman spectroscopy and X-ray diffraction (XRD) techniques were used to study the main factors of etching InGaAs in Cl2 / N2 atmosphere The damage mechanism was mainly determined by the lattice defect damage. The micro-PCD method was used to characterize and analyze the defects on the surface under different treatment conditions. The results showed that the wet etching and curing Method can reduce the surface defect damage and broken keys to a certain extent, but there are some deep defects.