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本文研究了n型硅阳极化的高选择和自终止工艺，并将该工艺用于形成多孔氧化硅全隔离SOI结构．采用这种FIPOS（FullIsolationbyPorousOxidizedSilicon）技术在n-／n＋／n-衬底上形成的SOI（SiliconOnInsulator）结构，其顶层硅岛厚度可控制在较广范围（从100nm到数μm），且硅岛宽度可大于100μm．XTEM结果显示顶层硅／氧化层界面非常平整和均匀．在硅膜厚300nm的FIPOS衬底上采用2μm硅栅工艺制备了N沟和P沟MOS晶体管和21级环形振荡器，环振的门延迟为396ps.
In this paper, the high-selectivity and self-termination process of n-type silicon anodization was studied and the process was used to form a porous SOI with full isolation. The SOI (SiliconOnInsulator) structure using the FIPOS (Full Isolation by Porous Oxidized Silicon) technology on the n- / n + / n- substrate can control the top silicon island thickness to a wide range (from 100 nm to several μm) and the silicon island width Can be greater than 100 μm. XTEM results show that the top silicon / oxide interface is very flat and uniform. N-channel and P-channel MOS transistors and 21-ring oscillators were fabricated using a 2μm Si gate process on a 300μm-thick FIPOS substrate with a gate delay of 396ps.