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通过材料设计与制备,甚长波GaAs/AlGaAs多量子阱红外探测器的峰值响应波长14.6μm,响应带宽大于2.2μm.256×1焦平面线列采用垂直入射二维光栅耦合工作模式,45K温度下,单元响应率4.28×10-2A/W、单元黑体探测率Db*=5.14×109cm·Hz1/2/W、单元黑体单色探测率Dλ*=4.24×1010cm·Hz1/2/W.通过铟柱与互补式金属-氧化物-半导体读出电路互连得到的甚长波量子阱红外探测器FPA(focal plane array)在积分时间100μs时,有效像元率Nef=99.22%、平均响应率R=3.485×106V/W、响应率的不均匀性UR=5.83%、平均黑体探测率典型值Db*=2.181×108cm·Hz1/2/W、平均单色探测率Dλ*=8.288×109cm·Hz1/2/W.器件已适合进行室温目标的热像图.
Through the material design and preparation, the long wavelength GaAs / AlGaAs multiple quantum well infrared detector has a peak response wavelength of 14.6μm and a response bandwidth of more than 2.2μm. The focal plane line of 2.56 × 1 adopts a vertical incidence two-dimensional grating coupled mode of operation, , Cell response rate of 4.28 × 10-2A / W, cell blackbody detection rate Db * = 5.14 × 109cm · Hz1 / 2 / W, cell blackbody monochrome detection rate Dλ * = 4.24 × 1010cm · Hz1 / 2 / W. By indium The FPA (focal plane array) FPA obtained by the interconnection between the column and the complementary metal-oxide-semiconductor readout circuit has an effective pixel rate of Nef = 99.22% at an integration time of 100 μs and an average responsivity of R = 3.485 × 106V / W, Unevenness of response rate UR = 5.83%, Average blackbody detection rate Db * = 2.181 × 108cm · Hz1 / 2 / W, Average monochrome detection rate Dλ * = 8.288 × 109cm · Hz1 / 2 / W. Thermophysical image of the device suitable for room temperature target.