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利用CO2 激光辅助等离子体激励式化学气相沉积系统 (Laser assistedPlasma enhancedChemicalVaporDeposition ,orLAPECVD) ,在硅 (Si)基片上沉积出非晶形含氢较低的氮化硅 (a∶Si Nx∶H)薄膜。这些薄膜的折射率增加、膜致密性及平整度良好 ,其抗腐蚀性亦明显提升。LAPECVD沉积法是在电容式RF放电解离反应气体的同时 ,以输出功率密度 3 3W cm2 的CO2 激光斜向照射在硅基片上。因为激光斜照在硅基片上所提升的温度只有 5 5℃ ,且可大量减少膜中的氢含量 ,以波长 10 5 8μm激光照射获得的薄膜品质较波长 9 5 2 μm更佳 ,将此一非热效应的发生原因提出推论
The laser-assisted plasma enhanced chemical vapor deposition (orLAPECVD) was used to deposit a thin film of amorphous silicon with low hydrogen content (a: Si Nx:H) on a silicon (Si) substrate. The refractive index of these films increases, the film is dense and flatness is good, its corrosion resistance is also significantly improved. The LAPECVD deposition method irradiates a silicon substrate diagonally with a CO2 laser having a power density of 3 3 W cm2 while dissociating the reaction gas by a capacitive RF discharge. Because the temperature gradient of the laser obliquely on the silicon substrate is only 55 ℃, and the hydrogen content in the film can be greatly reduced, the film quality obtained by the laser irradiation at the wavelength of 1058μm is better than the wavelength of 952μm. Non-thermal effects of the reasons put forward inference