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针对暗电流低、灵敏度高等优点的新原理量子效应光电探测器,设计和加工了增益可调CTIA读出电路,以获得宽动态范围读出。读出电路芯片与1×64元量子效应光电探测器集成封装,在室温(300K)条件下进行读出测试研究。光源采用633nmHe-Ne激光器,直径50μm光斑聚焦照射。测试结果表明:器件偏压为-0.1V,激光功率150pW,积分时间78μs,响应电压55mV,电压响应率达到3.67E+08V/W。根据测试结果,提出了进一步降低暗电流影响的改进测试方案。
A new principle quantum-effect photodetector with low dark current and high sensitivity is designed and fabricated with a gain-adjustable CTIA readout circuit for wide dynamic range readout. The read-out circuit chip is integrated with the 1 × 64 quantum-effect photodetector, and the readout test is conducted at room temperature (300K). Light source using 633nmHe-Ne laser, 50μm diameter spot focused irradiation. The test results show that the device bias voltage is -0.1V, the laser power is 150pW, the integration time is 78μs, the response voltage is 55mV and the voltage response rate is 3.67E + 08V / W. According to the test results, an improved test scheme to further reduce the influence of dark current is proposed.