【摘 要】
：
Introducing ferromagnetism into non-magnetic systems without the participation of magnetic elements is promising for all-electric spintronic devices[1,2].Many approaches have been pursued,such as non-magnetic defects induced magnetization in layered mater
【机 构】
：
Shenzhen Institute for Quantum Science and Engineering,Southern University of Science and Technology
论文部分内容阅读
Introducing ferromagnetism into non-magnetic systems without the participation of magnetic elements is promising for all-electric spintronic devices[1,2].Many approaches have been pursued,such as non-magnetic defects induced magnetization in layered materials[3-5]or the inversion symmetry breaking induced magnetization in magic-angle bilayer graphene[6-8],etc.However,these approaches have to tackle with the localization effects or the inevitable precise control of twist angle,which hinders the future application into large-scale spintronic information devices.Theorists also predicted that the spontaneous ferromagnetism could emerge in the quasi-2D crystals[9]like GaSe,but no experimental results have been reported.Here,we report the spontaneous ferromagnetism induced by van Hove singularity[9-13]in non-magnetic group IV Ge1-xSnx alloys grown by the molecular beam epitaxy(MBE)technique.Our findings experimentally open up an opportunity to realize spintron-ics in group IV semiconductors.
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