本文基于电容耦合多个纳米隧道结串联结构的半经典模型，研究了三结单电子晶体管的基本方程，分析了其Ｉ－Ｖ特性，并对三结与两结单电子晶体管的特性进行了比较．结果表明，单电子晶体管的特性与常规晶体管有很大的差别，且三结单电子晶体管与两结单电子晶体管相比较，具有更高的灵敏度和更强的抗电磁干扰能力 Based on the semi-classical model of capacitive coupling of tandem junction structures of several nanometer tunnel junctions, the basic equations of triple junction single electron transistors are studied, the I-V characteristics are analyzed, and the characteristics of triple junction and two junction single electron transistors are compared . The results show that the characteristics of single-electron transistors are quite different from conventional transistors, and the triple-junction single-electron transistor has higher sensitivity and stronger anti-electromagnetic interference capability than the two-junction single-electron transistor