当模拟芯片设计师在其器件中采用绝缘体上硅(SOI)衬底时,常常是为了扩充这些器件的高速性能。当您在位于(通常是)硅氧化物的某一深层之上的硅层中,而不是直接在晶圆的块硅上制造硅电路时,就可以减少或去除许多寄生元件,这些寄生元件 When analog chip designers use silicon-on-insulator (SOI) substrates in their devices, they often extend the high-speed performance of these devices. When you create a silicon circuit in a layer of silicon that is located on a (usually) deep layer of silicon oxide instead of directly on bulk silicon on a wafer, many parasitic elements can be reduced or removed. These parasitic elements