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We investigate the recombination mechanism in an a-Si/c-Si interface,and analyze the key factors that influence the interface passivation quality,such as Q_s,δ_p/δ_n and D_(it).The polarity of the dielectric film is very important to the illustration level dependent passivation quality;when nδ_n = pδ_p and the defect level E_t equal to E_i(c-Si),the defect states are the most effective recombination center,AFORS-HET simulation and analysis indicate that emitter doping and a-Si/c-Si band offset modulation are effective in depleting or accumulating one charged carrier.Interface states(D_(it)) severely deteriorate V_(oc) compared with J_(sc) for a-Si/c-Si HJ cell performance when D_(it) is over 1×10~(10) cm~(-2)·eV~(-1).For a c-Si(P)/a-Si(P~+) structure,φ_(BSF) in c-Si andφ_0 in a-Si have different performances in optimization contact resistance and c-Si(P)/a-Si(P~+) interface recombination.
We investigate the recombination mechanism in an a-Si / c-Si interface, and analyze the key factors that influence the interface passivation quality, such as Q_s, δ_p / δ_n and D_ (it). The polarity of the dielectric film is very important when nδ_n = pδ_p and the defect level E_t equal to E_i (c-Si), the defect states are the most effective recombination center, AFORS-HET simulation and analysis indicate that emitter doping and a-Si / c-Si band offset modulation are effective in depleting or accumulating one charged carrier.Interface states (D_ (it)) severely deteriorate V oc (oc) compared with J_ (sc) for a-Si / c-Si HJ cell performance when D_ (it) is over 1 × 10 ~ (10) cm -2 · eV -1 .For a c-Si (P) / a-Si c-Si andφ_0 in a-Si have different performances in optimization contact resistance and c-Si (P) / a-Si (P ~ +) interface recombination.