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采用高纯有机硅化合物和金属氧化物,按比例均匀混合制成糊状材料,涂敷于器件台表面,用于半导体p-n结表面特性的控制和保护.固化后该材料在室温下的体电阻率大于7.5×1015Ω.cm,介电常数为4.7,击穿电压高于16kV/mm.该材料用于KP500型晶闸管表面保护,能明显改善器件的表面特性、减少漏电流和提高耐压水平,并对提高器件性能的机理进行了研究.
Using high purity organic silicon compounds and metal oxides, uniformly mixed in proportion to form a paste material, applied to the surface of the device table for semiconductor pn junction surface characteristics of the control and protection of the material after curing the body resistance at room temperature The rate is greater than 7.5 × 1015Ω.cm, the dielectric constant is 4.7, the breakdown voltage is higher than 16kV / mm. This material is used for KP500 type thyristor surface protection, can obviously improve the surface characteristics of the device, reduce the leakage current and improve the voltage level, The mechanism of improving device performance has also been studied.