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以高纯(6N)Cd、Si、P单质为原料,采用双温区气相输运法和改进的垂直布里奇曼法合成生长出等径尺寸为Φ17 mm×65 mm的CdSiP_2单晶锭,经切割抛光得到CdSiP_2晶片。将样品分别置于真空、镉气氛、磷气氛和在同成分粉末包裹中进行了退火试验。采用X射线能量色散谱仪(EDS)和傅里叶红外分光光度计(FTIR)对退火前后的晶片组分及红外透过谱进行了测试分析。结果表明:四种氛围退火前后样品的组分变化不大,原子比接近理想的化学计量比;镉气氛下退火对晶片的红外透过率改善较为显著,在1600~4500 cm~(-1)范围内的红外透过率由46%~52%提高到51%~57%,接近CdSiP_2晶体红外透过率的理论值。
The CdSiP_2 monocrystal ingot with the diameter of Φ17 mm × 65 mm was synthesized and grown by the double-zone gas-phase transport method and the modified vertical Bridgman method with high-purity (6N) Cd, Si, After cutting and polishing to obtain CdSiP_2 wafer. The samples were placed in a vacuum, respectively, cadmium atmosphere, phosphorus atmosphere and in the same composition of the powder wrapped in the annealing test. The composition and infrared transmission spectrum of the wafer before and after annealing were analyzed by X-ray energy dispersive spectrometer (EDS) and Fourier transform infrared spectrophotometer (FTIR). The results show that the compositions of the samples before and after annealing in four atmospheres have little change, and the atomic ratio is close to the ideal stoichiometric ratio. The infrared transmittance of the wafer annealed in the atmosphere of cadmium is more remarkable. At 1600 ~ 4500 cm -1, Range of infrared transmittance from 46% to 52% to 51% to 57%, close to the theoretical value of infrared transmittance of CdSiP 2 crystals.