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对基于4H-SiC和6H-SiC的垂直双扩散MOSFET(VDMOSFET)的单粒子烧毁(SEB)效应进行了对比研究。建立了器件的二维仿真结构,对不同SiC材料构成的器件物理模型及其材料参数进行了修正。利用Silvaco TCAD软件进行了二维器件的特性仿真,得到了两器件SEB效应发生前后的漏极电流曲线和电场分布图。研究结果表明,4H-SiC和6H-SiC VDMOSFET的SEB阈值电压分别为335 V和270 V,发生SEB效应时的最大电场强度分别为2.5 MV/cm和2.2 MV/cm,4H-SiC材料在抗SEB效应方面比6H-SiC材料更有优势。所得结果可为抗辐射功率器件的设计及应用提供参考。
Single-particle destructive (SEB) effects of 4H-SiC and 6H-SiC based vertical double-diffused MOSFETs (VDMOSFETs) were compared. The two-dimensional simulation structure of the device is established, and the physical model of the device made of different SiC materials and the material parameters thereof are revised. Silvaco TCAD software was used to simulate the characteristics of two-dimensional device, and the drain current curve and electric field distribution before and after the SEB effect were obtained. The results show that the SEB threshold voltages of 4H-SiC and 6H-SiC VDMOSFETs are 335 V and 270 V, respectively. The maximum electric field intensities for SEB are 2.5 MV / cm and 2.2 MV / cm, respectively. SEB effect than the 6H-SiC material has more advantages. The results can provide reference for the design and application of anti-radiation power devices.