论文部分内容阅读
High-density horizontal InAs nanowire transistors are fabricated on the interdigital silicon-on-insulator substrate.Hexagonal InAs nanowires are uniformly grown between face-to-face(111) vertical sidewalls of neighboring Si fingers by metal–organic chemical vapor deposition. The density of InAs nanowires is high up to 32 per group of silicon fingers,namely an average of 4 nanowires per micrometer. The electrical characteristics with a higher on/off current ratio of 2×10~5are obtained at room temperature. The silicon-based horizontal InAs nanowire transistors are very promising for future high-performance circuits.
High-density horizontal InAs nanowire transistors are fabricated on the interdigital silicon-on-insulator substrate. Hexagonal InAs nanowires are grown between face-to-face (111) vertical sidewalls of neighboring Si fingers by metal-organic chemical vapor deposition. The density of InAs nanowires is high up to 32 per group of silicon fingers, which an average of 4 nanowires per micrometer. The electrical characteristics with a higher on / off current ratio of 2 × 10 ~ 5are obtained at room temperature. The silicon-based horizontal InAs nanowire transistors are very promising for future high-performance circuits.