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The semiconducting properties of anodic film formed on Pb in 4.5mol.dm~(-3)H_2SO_4 solu-tion(30℃)at 0.9 V(vs.Hg/Hg_2SO_4)for 2 h were studied using AC impedance method.The phasecomposition of the film is PbSO_4 and PbO.PbSO_4.The semiconducting properties are due to the latter.The Mott-Schottky plots show that the said film is an n-type semiconductor with flat-band potentialof-0.9 V(vs.Hg/Hg_2SO_4)and donor density of 1×10~(16)cm~(-3).The surface density measured at410—2500 Hz is(2—5)×10~(12)cm~(-2)eV~(-1).
The semiconducting properties of anodic film formed on Pb in 4.5mol.dm ~ (-3) H_2SO_4 solu- tion (30 ℃) at 0.9 V (vs.Hg / Hg_2SO_4) for 2 h were studied using AC impedance method. The phase composition the film is PbSO_4 and PbO.PbSO_4.The semiconducting properties are due to the latter. Mott-Schottky plots show that the film is an n-type semiconductor with flat-band potential of -0.9 V (vs.Hg / Hg_2SO_4) and donor density of 1 × 10 ~ (16) cm ~ (-3). The surface density measured at 410-2500 Hz is (2-5) × 10 ~ (12) cm -2 eV -1.