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Carbon nanomaterials,including the one-dimensional(1-D) carbon nanotube(CNT) and two-dimensional(2-D) graphene,are heralded as ideal candidates for next generation nanoelectronics.An essential component for the development of advanced nanoelectronics devices is processing-compatible oxide.Here,in analogy to the widespread use of silicon dioxide(SiO2) in silicon microelectronic industry,we report the proof-of-principle use of graphite oxide(GO) as a gate dielectrics for CNT field-effect transistor(FET) via a fast and simple solution-based processing in the ambient condition.The exceptional transistor characteristics,including low operation voltage(2 V),high carrier mobility(950 cm2/V-1 s-1),and the negligible gate hysteresis,suggest a potential route to the future all-carbon nanoelectronics.
Carbon nanomaterials, including the one-dimensional (1-D) carbon nanotube (CNT) and two-dimensional (2-D) graphene, are heralded as ideal candidates for next generation nanoelectronics. An essential component for the development of advanced nanoelectronics devices is processing-compatible oxide. Here, in analogy to the widespread use of silicon dioxide (SiO2) in silicon microelectronic industry, we report the proof-of-principle use of graphite oxide (GO) as a gate dielectrics for CNT field- effect transistor FET) via a fast and simple solution-based processing in the ambient condition. The exceptional transistor characteristics, including low operation voltage (2 V), high carrier mobility (950 cm2 / V-1 s-1), and the negligible gate hysteresis suggest a potential route to the future all-carbon nanoelectronics.