业已表明,用GaInAs-pin光电二极管与GaAs FET前置放大器结合的光接收器的性能,可与雪崩二极管接收器相当。此外,pin-FET接收器还有工作电压低和不需要温度补偿之优点。既然制作低噪声长波长雪崩光电二极管(APD)遇到了一些困难,而pin-FET接收器又有这许多优点,所以在一些长波长光纤传输系统中自然要使用它,实际上也已经使用了pin-FET接收器。因此,这就自然引起了对接收器元件、特别是GaInAs-pin光电二极管和GaAs FET可靠性的注意。但是目前还没有人完成这方面的工作。在本文中,我们报告GaInAs-pin光电二 It has been shown that the performance of an optical receiver incorporating a GaInAs-pin photodiode in combination with a GaAs FET preamplifier can be comparable to an avalanche diode receiver. In addition, the pin-FET receiver has the advantages of low operating voltage and no need for temperature compensation. Since it has encountered some difficulties in making low-noise long-wavelength avalanche photodiodes (APDs), and pin-FET receivers have many of these advantages, they are naturally used in some long-wavelength optical fiber transmission systems. In fact, pin -FET receiver. This therefore naturally draws attention to the reliability of receiver elements, in particular GaInAs-pin photodiodes and GaAs FETs. However, no one has completed the work in this area yet. In this paper, we report GaInAs-pin photodiode