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采用二次离子质谱仪(SIMS)测试了SiON和Ta双层扩散阻挡层及Ta扩散阻挡层的阻挡性能;采用X射线衍射仪(XRD)测量了沉积态有Ta阻挡层和无阻挡层Cu膜的晶体学取向结构;利用电子薄膜应力测试仪测量了具有双层阻挡层Cu膜的应力分布状况。测试结果表明,双阻挡层中Ta黏附层有效地将Cu附着于Si基片上,并对Cu具有一定的阻挡效果,而SiON层则有效地阻止了Cu向SiO2中的扩散。与Ta阻挡层相比,双阻挡层具有较好阻挡性能。有Ta阻挡层的Cu膜的{111}织构明显强于无阻挡层的Cu膜。离子注氮后,薄膜样品应力平均值为206MPa;而电镀Cu膜后,样品应力平均值为-661.7MPa。
The barrier properties of SiON and Ta double diffusion barriers and Ta diffusion barriers were tested by SIMS. The Cu films with and without Ta barrier were measured by X-ray diffraction (XRD) The crystal orientation structure of the Cu film with double barrier layer was measured by the electronic film stress tester. The test results show that the Ta adhesion layer in the double barrier layer effectively adheres Cu to the Si substrate and has a certain barrier effect on Cu while the SiON layer effectively prevents the diffusion of Cu to SiO2. The double barrier has better barrier properties than the Ta barrier. The {111} texture of the Cu film with the Ta barrier is significantly stronger than that of the Cu film without the barrier layer. After nitrogen ion implantation, the average stress of the film sample is 206MPa; while the average stress of the sample after electroplating Cu film is -661.7MPa.