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采用 BCl3和 Ar作为刻蚀气体对 Ga As、Al As、DBR反应离子刻蚀的速率进行了研究 ,通过控制反应的压强、功率、气体流量和气体组分达到对刻蚀速率的控制 .实验结果表明 :在同样条件下 Ga As刻蚀的速率高于 DBR和 Al As,在一定条件下 Ga As刻蚀的刻蚀速率可达 40 0 nm/m in,Al As的刻蚀速率可达 35 0 nm/min,DBR的刻蚀速率可达 340 nm/min,刻蚀后能够具有光滑的形貌 ,同时能够形成陡直的侧墙 ,侧墙的角度可达 85°.
The etching rate of GaAs, AlAs and DBR was studied by using BCl3 and Ar as etching gas, and the etching rate was controlled by controlling the reaction pressure, power, gas flow rate and gas composition.Experimental results It is shown that the GaAs etching rate is higher than that of DBR and AlAs under the same conditions and the etching rate of GaAs etching can reach 40 0 nm / nm / min, the DBR etch rate can reach 340 nm / min. After etching, the DBR can have a smooth appearance and can form a steep side wall with an angle of 85 °.