采用脉冲激光沉积的方法,在Pt/SiO_2/Si衬底上制备了掺Ca的(Pb,La)TiO_3薄膜。薄膜呈多晶结构,具有较好的铁电性和热释电性。由于掺Ca的作用,使薄膜的材料探测优值和电压响应优值几乎与单晶MgO衬底上的c轴取向的PbTiO_3或(Ph,La)TiO_3薄膜相比拟。这些较好的实验结果是在硅基衬底上的铁电薄膜中获得的,因而对研制单片集成的红外热释电阵列将有一定的意义。 A pulsed laser deposition method was used to fabricate a (Pb, La) TiO_3 - doped film on a Pt / SiO_2 / Si substrate. The film was polycrystalline structure, with good ferroelectric and pyroelectric properties. Due to the effect of Ca doping, the film’s material superiority and voltage response are almost comparable to those of c-axis oriented PbTiO_3 or (Ph, La) TiO_3 films on single-crystal MgO substrates. These good experimental results are obtained in ferroelectric thin films on silicon-based substrates, and therefore have some significance for the development of monolithically integrated infrared pyroelectric arrays.