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一、前言有关低压硅外延生长技术的研究工作,我们曾做过一些报导。这种技术是一种新的单晶薄膜生长工艺。它在抑制自掺杂、改善电阻率均匀性和厚度均匀性、防止埋层图形畸变等方面有明显的效果。用低压外延技术生长薄层、多层、异型外延片是非常有利的。研究、应用和发展这种技术对促进微波器件及高速集成电路的发展有很大意义。二、基本原理在低压情况下,气体分子的平均自由程增大,因而质量输运加快,气体分子分布的不均匀性可在极短的时间内消除,系统内气体分子
I. Preface We have done some research on the research work of low-voltage silicon epitaxial growth technology. This technique is a new single-crystal thin film growth process. It has obvious effects in suppressing self-doping, improving resistivity uniformity and thickness uniformity, and preventing burial pattern distortion. The use of low-voltage epitaxial growth of thin-layer, multi-layer, shaped epitaxial wafers is very favorable. Research, application and development of this technology to promote the development of microwave devices and high-speed integrated circuits of great significance. Second, the basic principle Under the condition of low pressure, the mean free path of the gas molecules increases, so the mass transport is accelerated, the gas molecule distribution inhomogeneity can be eliminated in a very short period of time, the system of gas molecules