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以金属无机盐SnCl2.2H2O、CuCl2.2H2O和无水乙醇为原料,用溶胶凝胶法制备了SnO2和CuO掺杂的CuO-SnO2薄膜,并用X射线衍射、扫描电镜、透射电镜和电化学工作站对样品进行了表征。结果表明:随着退火温度的增加,薄膜结晶性变好,晶粒长大,电学特性增强,最佳退火温度确定为450℃。掺杂CuO的SnO2薄膜导电性好于同等条件下未掺杂的SnO2薄膜。SnO2呈四方相金红石结构,衍射峰显示薄膜中存在部分SnO。聚乙二醇的添加增强了SnO2的衍射峰,当超过一定添加量后将抑制晶粒的生长,并使得CuO-SnO2薄膜的导电性呈先减小后增大的趋势。丙三醇的添加可极大改善薄膜的表面形貌,增强了SnO2的衍射峰,且导电性明显变好。
SnO 2 and CuO doped CuO-SnO 2 thin films were prepared by sol-gel method using metal salts of SnCl2.2H2O, CuCl2.2H2O and anhydrous ethanol as raw materials. X-ray diffraction, scanning electron microscopy, transmission electron microscopy and electrochemical workstation The samples were characterized. The results show that with the increase of annealing temperature, the crystallinity of the films becomes better, the grains grow and the electrical properties are enhanced. The optimum annealing temperature is 450 ℃. The CuO-doped SnO2 thin film is better than the undoped SnO2 thin film under the same conditions. SnO2 tetragonal rutile structure, the diffraction peak shows that there is a part of the film SnO. The addition of polyethylene glycol enhances the diffraction peak of SnO2. When more than a certain amount of addition is added, the growth of the grains will be inhibited and the conductivity of the CuO-SnO2 thin film will first decrease and then increase. Addition of glycerin can greatly improve the surface morphology of the film, enhance the diffraction peak of SnO2, and the conductivity is obviously better.