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采用光调制反射光谱（PR）研究了（0001）晶向蓝宝石村底上MOCVD方法生长的单晶六角GaN薄膜的室温光学性质。测得六角GaN薄膜的禁带宽度为3．400eV，对PR谱的调制机理进行了分析，发现信号来自缺陷作用下的表面电场调制。光吸收增和光反射谱的测量，得到3．39eV的光学吸收边和3．3eV的反射峰，证实了光调制反射光谱的结果。
Room temperature optical properties of (0001) single crystal hexagonal GaN films grown by MOCVD on sapphire substrates were investigated by light-modulated reflectance spectroscopy (PR). The measured band gap of the hexagonal GaN film is 3.400eV. The modulation mechanism of the PR spectrum was analyzed and it was found that the signal came from the surface electric field modulation under the defect. Measurement of light absorption and light reflection spectra gave an optical absorption edge of 3.39 eV and a reflection peak of 3.3 eV, confirming the result of the light modulation reflection spectrum.