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研究了非均匀应变对低维量子结构的能带和ＴＥ模光增益所产生的影响。由变分法推导应变沿ｚ轴方向的解析分布。在有效质量理论框架下，采用传递矩阵方法计算应变沿ｚ轴方向非均匀分布时的量子阱结构的能带和ＴＥ模光增益。解析推导表明非均匀应变分布与ｘ－ｙ方向的尺度有密切关系。当ｘ－ｙ方向的尺度较小时，阱区内的应变表现为明显的非均匀分布。计算结果表明，非均匀应变对量子线和量子点结构的能带和增益有着极为重要的影响。
The effect of non-uniform strain on the energy band and TE mode gain of low-dimensional quantum structures is studied. Analytic distribution of strain along the z axis deduced by variational method. In the framework of effective mass theory, the transfer matrix method is used to calculate the energy band and the TE mode gain of the quantum well structure when the strain is unevenly distributed in the z-axis direction. Analytical deduction shows that the distribution of non-uniform strain is closely related to the scale of x-y direction. When the scale in the x-y direction is small, the strain in the well region shows a significant non-uniform distribution. The calculated results show that the nonuniform strain has a very important influence on the bandgap and gain of quantum wire and quantum dot structure.