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在低温和强磁场下,通过磁输运测量研究了不同Al组分调制掺杂Al_xGa_(1-x)N/GaN异质结二维电子气(2DEG)的磁电阻振荡现象.观察到低Al组分异质结中的2DEG有较低的浓度和较高的迁移率.
The magnetic resistance oscillations of Al_xGa_ (1-x) N / GaN heterostructured two-dimensional electron gas (2DEG) doped with different Al components were investigated by magnetic transport measurements at low temperature and high magnetic field. 2DEG in the component heterojunction has lower concentration and higher mobility.