论文部分内容阅读
ＳＯＩ－ＭＯＳＦＥＴ主要模型参数得到一致的提取，因而该模型嵌入ＳＰＩＣＥ后能保证ＣＭＯＳ／ＳＯＩ电路的正确模拟工作，从ＣＭＯＳ／ＳＯＩ器件和环振电路的模拟结果和实验结果看，两者符合得较好，说明我们所采用的ＳＯＩＭＯＳＦＥＴ器件模型及其参数提取都是成功的。
SOI-MOSFET main model parameters are extracted consistently, so the model can guarantee the correct simulation of CMOS / SOI circuit after embedded in SPICE. From the simulation results and experimental results of CMOS / SOI devices and ring-oscillator circuit, the two are in good agreement Well, that we have adopted the SOIMOSFET device model and its parameter extraction are successful.