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PECVD(等离子增强化学汽相淀积)氮化硅薄膜在集成电路制作中已广泛用作钝化膜.其优点是制备温度低(≤400℃)、台阶覆盖好、对水份和钠离子都是好的钝化膜.制备PECVD氮化硅大多数采用SiH_4/NH_3作为反应气体.由于SiH_4/N_2工艺过程较难控制.但是SiH_4/N_2的方法所制得的膜含氢量较少,而且反应气体源更易纯化. 与常规CVD方法不同,PECVD方法应属于高度的非平衡反应过程,在等离子体中气体分子被电子撞击大部分离解
PECVD (Plasma Enhanced Chemical Vapor Deposition) silicon nitride films have been widely used as passivation films in the fabrication of integrated circuits and have the advantages of low preparation temperature (≤400 ° C), good step coverage, good water and sodium ions Is a good passivation film.Preparation of PECVD silicon nitride for most of the SiH_4 / NH_3 as a reaction gas due to SiH_4 / N_2 process is more difficult to control.But the SiH_4 / N_2 method produces a membrane containing less hydrogen, and The reactive gas source is easier to purify. Unlike conventional CVD methods, the PECVD method should be highly non-equilibrium reaction processes in which the gas molecules are mostly collided by electrons