日本NEC公司已采用氧化担薄膜的电容单元制成在1GbDRAM用的电容绝缘膜，其绝缘性能比硅氧化膜高好几倍，而目标是使用于1GbDRAM的氧化钽达到实用化水平。在下电极上采用半球状（SHG）的多晶硅，中间夹有钨，氧化钽的厚度用氧化膜来换算为1．6um，达到薄膜化，控制电极高度，容 Japan’s NEC has adopted oxide thin film capacitor unit made of 1GbDRAM capacitor insulation film, the insulation performance several times higher than the silicon oxide film, and the goal is to use tantalum oxide 1GbDRAM reached the practical level. On the lower electrode, a hemispherical (SHG) polycrystalline silicon was used with tungsten interposed therebetween. The thickness of the tantalum oxide was 1.6 μm in terms of an oxide film, thereby achieving thinning and controlling the height of the electrode