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人们普遍认为,InAlAs/InGaAs/InP系统是极有发展前途的低噪声、高频器件材料。因为与InP晶格匹配的In_xGa_(1-x)As中In组分x值为0.53,这比In_(x≤0.2)Ga_(1-x)As/GaAs赝配结构中In组分大得多,从而有大的电子饱和速度(2.6×10~7cm/s)和高的室温迁移率(～10000cm~2/V·s)。大的导带不连续性(0.5eV),使量子阱对电子的限制作用增强,且掺杂浓度高,因而二维电子气(2DEG)密度大。测量结果还表明,掺杂InAlAs中不存在类似AlGaAs中的DX中心。
It is generally accepted that the InAlAs / InGaAs / InP system is a very promising low noise, high frequency device material. Because the value of In in the In_xGa_ (1-x) As lattice-matched to InP is 0.53, the value of In is much larger than the In content in the In_ (x≤0.2) Ga_ (1-x) As / GaAs pseudomorphism , Resulting in large electron saturation velocities (2.6 × 10-7 cm / s) and high room-temperature mobilities (~10,000 cm -2 / V · s). A large conduction band discontinuity (0.5 eV) enhances the electron confinement of the quantum well, and its high doping concentration leads to a large 2DEG density. The measurements also show that there is no DX center in the doped AlAlAs similar to that in AlGaAs.