欧姆接触是半导体器件工艺的基本环节之一,制得低而稳定的接触电阻对器件性能的改进有很大意义.n型GaAs欧姆接触合金目前普遍采用以AuGe共晶为基加入不同量的Ni合金,但加热合金化有缩球现象、不均匀性和表面粗糙的缺点,对器件性能带来影响.近年来,不少学者以红宝石脉冲激光器、氩离子连续激光器等进行激光合金化,得到了良好的欧姆接触. Ohmic contact is one of the basic steps in semiconductor device technology, making a low and stable contact resistance of the device performance improvement is of great significance.n-type GaAs ohmic contact alloys are currently widely used AuGe eutectic on the basis of adding different amounts of Ni However, the shortcomings of shrinkage phenomenon, inhomogeneity and surface roughness in the heating alloying have an impact on the performance of the device.In recent years, many scholars have laser alloying with ruby ​​pulsed lasers, argon ion continuous lasers and the like, Good ohmic contact.